Ferroelectric PbTiO3 films grown by pulsed liquid injection MOCVD

被引:9
作者
Bartasyte, A.
Bouregba, R.
Dogheche, E.
Boudard, M.
Poullain, G.
Chaix-Pluchery, O.
Jimenez, C.
Plausinaitiene, V.
Remiens, D.
Abrutis, A.
Saltyte, Z.
Weiss, F.
机构
[1] INP Grenoble Minatec, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble 1, France
[2] Vilnius State Univ, Dept General & Inorgan Chem, LT-03225 Vilnius, Lithuania
[3] Univ Caen, CNRS, Lab CRISMAT, F-14050 Caen, France
[4] Inst Elect Microelect & Nanotechnol, F-59655 Villeneuve Dascq, France
[5] INP Grenoble UJF, CNRS, Sci & Ingn Mat & Procedes, F-38402 St Martin Dheres, France
关键词
MOCVD; PbTiO3; films; ferroelectric and piezoelectric properties;
D O I
10.1016/j.surfcoat.2007.05.006
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The influence of deposition conditions (pressure, growth rate, solution concentration, etc.) on the growth of ferroelectric PbTiO3 films by pulsed liquid injection MOCVD was examined. Pb(thd)(2) and Ti((OPr)-Pr-i)(2)(thd)(2) (thd=2,2,6,6-tetramethyl-3,5-heptanedionate) dissolved in toluene were used as precursors. Films were grown on LaAlO3 (001) substrates for deposition process optimisation. PbTiO3/La1-xSrxMnO3/LaAlO3 heterostructures were elaborated at optimized deposition conditions. The microstructure of the heterostructures was characterized by X-ray Diffraction and by Raman spectroscopy. Pt/PbTiO3/La1-xSrxMnO3/LaAlO3 structures were used for ferroelectric, dielectric and piezoelectric characterisations of PbTiO3 films. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:9340 / 9344
页数:5
相关论文
共 29 条
[1]   Magnetoresistant La1-xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition:: effect of deposition conditions, substrate material and film thickness [J].
Abrutis, A ;
Plausinaitiene, V ;
Kubilius, V ;
Teiserskis, A ;
Saltyte, Z ;
Butkute, R ;
Senateur, JP .
THIN SOLID FILMS, 2002, 413 (1-2) :32-40
[2]   Electric field effect in correlated oxide systems [J].
Ahn, CH ;
Triscone, JM ;
Mannhart, J .
NATURE, 2003, 424 (6952) :1015-1018
[3]   Structural, dielectric, and ferroelectric properties of PbTiO3 thin films by a simple sol-gel technique [J].
Bao, DH ;
Yao, X ;
Wakiya, N ;
Shinozaki, K ;
Mizutani, N .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 94 (2-3) :269-274
[4]   Ferroelectric PbTiO3 films grown by pulsed liquid injection metalorganic chemical vapour deposition [J].
Bartasyte, A. ;
Abrutis, A. ;
Jimenez, C. ;
Weiss, F. ;
Chaix-Pluchery, O. ;
Saltyte, Z. .
FERROELECTRICS, 2007, 353 :538-549
[5]   Numerical extraction of the true ferroelectric polarization due to switching domains from hysteresis loops measured using a Sawyer-Tower circuit [J].
Bouregba, R ;
Poullain, G .
FERROELECTRICS, 2002, 274 :165-181
[6]   EFFECT OF PRESSURE ON ZONE-CENTER PHONONS OF PBTIO3 AND ON FERROELECTRIC-PARAELECTRIC PHASE-TRANSITION [J].
CERDEIRA, F ;
HOLZAPFEL, WB ;
BAUERLE, D .
PHYSICAL REVIEW B, 1975, 11 (03) :1188-1192
[7]  
DEKEIJSER M, 2000, THIN SOLID FILMS, V368, P261
[8]   STRESS-INDUCED MODIFICATIONS IN FERROELECTRIC-FILMS [J].
DESU, SB .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 141 (01) :119-133
[9]   RAMAN-SPECTRUM IN PBTIO3 REEXAMINED - DYNAMICS OF THE SOFT PHONON AND THE CENTRAL PEAK [J].
FONTANA, MD ;
IDRISSI, H ;
KUGEL, GE ;
WOJCIK, K .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (44) :8695-8705
[10]   Comparison of deposition behavior of Pb(Zr,Ti)O3 films and its end-member-oxide films prepared by MOCVD [J].
Funakubo, H ;
Nagashima, K ;
Shinozaki, K ;
Mizutani, N .
THIN SOLID FILMS, 2000, 368 (02) :261-265