2 μm thin film c-Si cells on near-Lambertian Al2O3 substrates

Near-Lambertian Al2O3 substrates, which have the reflectivity of almost 100% and superior optical diffusivity, were newly developed by the doctor-blade technique and 2 mum thin film c-Si cells with the large short-circuit current J(SC) of 15.6 mA/cm(2) (photocurrent J(ph),, of 17.5 mA/cm(2)) were fabricated on the substrates. These cells were prepared by ECR plasma chemical vapor deposition, electron-beam recrystallization, conventional phosphorus diffusion and ITO metallization. The optical confinement in such thin film c-Si cells on the diffuse-reflective substrates was experimentally and theoretically investigated. The theoretical computation presented a strong possibility of higher J(SC) beyond 30 mA/cm(2). (C) 2001 Elsevier Science B.V. All rights reserved.