pH-responsive silicon wafer prepared by hydrogen annealing

被引:1
|
作者
Abe, Y
Nogami, M
Matsubara, T
Kashima, K
机构
[1] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 466, Japan
[2] Toshiba Ceram Co Ltd, Silicon Div, Kanagawa 257, Japan
关键词
D O I
10.1016/S0038-1098(98)00061-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We found that silicon wafers prepared by hydrogen gas annealing at high temperatures exhibit good pH-response while those without hydrogen annealing do not. When the pH-responsive silicon wafer is heated in air at a high temperature, e.g. 600 degrees C, so that oxide layer forms on the surface, the pH-responsive properties disappear. It is conceived that a small amount of mobile protons are present in the pH-responsive silicon wafer. The silicon wafers have a potential use for pH-electrode materials which are applicable to pH-measurement even in HF solution. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:321 / 323
页数:3
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