Melting of Al2O3 powder using the skull melting method

被引:0
作者
Choi, Hyun-Min [1 ]
Kim, Young-Chool [1 ]
Seok, Jeong-Won [2 ]
机构
[1] Hanmi Gemol Inst & Lab, Seoul 03138, South Korea
[2] Dongshin Univ, Adv Mat & Energy Engn, Naju 58245, South Korea
来源
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2019年 / 29卷 / 01期
关键词
Skull melting method; Al2O3; powder; Cold crucible; Synthetic single-crystal sapphire; CRYSTAL-GROWTH;
D O I
10.6111/JKCGCT.2019.29.1.024
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The current study demonstrates an efficient procedure to create ingots from Al2O3 powder using the skull melting method to use these ingots as a starting material in conventional methods for growing synthetic single-crystal sapphire. Dimension of the cold crucible was 24 cm in inner diameter and 30 cm in inner height, 15 kg of Al2O3 powder was completely melted within 1 h at an oscillation frequency of 2.75 MHz, maintained in the molten state for 3 h, and finally air-cooled. The areal density and components of the cooled ingot by parts were analyzed through scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDS). The areal density and Al2O3 content of the ingot were related to the temperature distribution inside the cold crucible during high-frequency induction heating, and the area with high temperature was high tends to be high in areal density and purity.
引用
收藏
页码:24 / 31
页数:8
相关论文
共 16 条
  • [1] Modern trends in crystal growth and new applications of sapphire
    Akselrod, Mark S.
    Bruni, Frank J.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2012, 360 : 134 - 145
  • [2] Large Ti-doped sapphire single crystals grown by the kyropoulos technique for petawatt power laser application
    Alombert-Goget, Guillaume
    Sen, Gourav
    Pezzani, Cyril
    Barthalay, Nicolas
    Duffar, Thierry
    Lebbou, Kheirreddine
    [J]. OPTICAL MATERIALS, 2016, 61 : 21 - 24
  • [3] Growth of yttria-doped zirconium oxide nitride single crystals by means of reactive skull melting
    Berendts, Stefan
    Lerch, Martin
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 336 (01) : 106 - 111
  • [4] Gross C, 1999, CRYST RES TECHNOL, V34, P319, DOI 10.1002/(SICI)1521-4079(199903)34:3<319::AID-CRAT319>3.0.CO
  • [5] 2-M
  • [6] Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system
    Hur, Min-Jae
    Han, Xue-Feng
    Choi, Ho-Gil
    Yi, Kyung-Woo
    [J]. JOURNAL OF CRYSTAL GROWTH, 2017, 474 : 24 - 30
  • [7] The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system
    Hur, Min-Jae
    Han, Xue-Feng
    Song, Dong-Seok
    Kim, Tae-Hyung
    Lee, Nam-Jin
    Jeong, Young-Jin
    Yi, Kyung-Woo
    [J]. JOURNAL OF CRYSTAL GROWTH, 2014, 385 : 22 - 27
  • [8] World's largest sapphire for many applications
    Khattak, Chandra P.
    Shetty, Raj
    Schwerdtfeger, C. Richard
    Ullal, Saurabh
    [J]. JOURNAL OF CRYSTAL GROWTH, 2016, 452 : 44 - 48
  • [9] Blocks and residual stresses in shaped sapphire single crystals
    Krymov, V. M.
    Nosov, Yu. G.
    Bakholdin, S. I.
    Maslov, V. N.
    Shul'pina, I. L.
    Nikolaev, V. I.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2017, 457 : 314 - 319
  • [10] Ma W., 2017, J CRYST GROWTH, V474, P38