Flexible Nano-Floating-Gate Memory With Channels of Enhancement-Mode Si Nanowires

被引：12

作者：

Jeon, Youngin ^{[1
]}

Lee, Myeongwon ^{[1
]}

Moon, Taeho ^{[1
]}

Kim, Sangsig ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 11期

关键词：

Field-effect transistor (FET); memory; nanocrystal (NC); nonvolatile; plastic substrate; Pt; silicon-nanowire (Si-NW) array; top-down approach; METAL NANOCRYSTAL MEMORIES; FIELD-EFFECT TRANSISTORS; ELECTRONICS; PHOTONICS;

D O I：

10.1109/TED.2012.2211879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n(+)-p-n(+) Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an ON-current/OFF-current ratio of similar to 10(7) and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to similar to 10(4) s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

引用

页码：2939 / 2942

页数：4

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