Design of D-Band Transformer-Based Gain-Boosting Class-AB Power Amplifiers in Silicon Technologies

被引:32
作者
Tang, Xinyan [1 ,2 ]
Nguyen, Johan [1 ,2 ]
Medra, Alaaeldien [1 ,2 ,3 ]
Khalaf, Khaled [1 ,4 ]
Visweswaran, Akshay [1 ]
Debaillie, Bjorn [1 ]
Wambacq, Piet [1 ,2 ]
机构
[1] IMEC, B-3001 Leuven, Belgium
[2] Vrije Univ Brussel VUB, Dept Elect & Informat ETRO, B-1050 Brussels, Belgium
[3] Qualcomm Inc, San Diego, CA 92121 USA
[4] Pharrowtech, B-3001 Leuven, Belgium
关键词
Beyond-5G era; D band; transformer-based matching network; gain-boosting PA; Class-AB PA; transmitter; wireless communication; bulk CMOS; FD-SOI; SiGe BiCMOS technology; BIPOLAR-TRANSISTOR MODEL; CIRCUIT-DESIGN;
D O I
10.1109/TCSI.2020.2974197
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents design considerations and methodology for D-band transformer-based Class-AB gain-boosting power amplifiers (PAs) in three advanced silicon technologies: 28 nm bulk CMOS (complementary metal oxide semiconductor), 22 nm FD-SOI (fully-depleted silicon on insulator), and 130 nm SiGe BiCMOS (Silicon-germanium bipolar-CMOS). Firstly, the choice of processes and models together with de-embedding approaches are discussed and described. Then, a general design flow for a transformer-based matching network (TMN) is introduced to accelerate the design of multistage PAs. Further, two gain-boosting topologies are analyzed. The influence of capacitive gain-boosting on PA performance (maximum available power gain G(max), saturation power P-sat, drain efficiency DE and power-added efficiency PAE) is studied for different silicon technologies after properly sizing the PA transistors to reach an optimum load resistance R-opt. The inductive gain-boosting PA is explored and compared with the capacitive gain-boosting one in SiGe BiCMOS to achieve an even higher P-sat while maintaining a high G(max). Finally, A D-band 4-stage capacitive gain-boosting PA is fabricated in a 28 nm bulk CMOS process as a reference to verify the design methodology and simulation results, and its detailed design considerations are described. This prototyped D-band PA achieved the state-of-the-art results: a 22.5 dB Gp, 6.6 % PAE, 8 dBm Psat and 81.1 FoM with only 0.0265 mm(2) core area.
引用
收藏
页码:1447 / 1458
页数:12
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