Electronic Band and Orbital Properties of Cs-Doped Pentacene Thin Films

被引:10
作者
Annese, E. [1 ,2 ]
Fujii, J. [2 ]
Vobornik, I. [2 ]
Rossi, G. [1 ,2 ]
机构
[1] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy
[2] IOM CNR, TASC Lab, I-34149 Trieste, Italy
关键词
PENNING-IONIZATION ELECTRON; LEVEL SHIFT; SPECTROSCOPY; SEXIPHENYL; BIPOLARON; BENZENE; CU(119); SURFACE; GROWTH; CUPC;
D O I
10.1021/jp203572z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We studied the electronic band structure of Cs-doped pentacene films grown on Cu(119). The Cs doping of pentacene films grown on Cu(119) determines relevant changes in the band structure. Angle-resolved photoemission spectroscopy reveals a formation of a new electronic state at similar to 0.6-0.7 eV below the Fermi energy. This state results from the filling of the lowest unoccupied molecular orbital as also shown by X-ray absorption at C Is edge. At doping level of similar to 1.8 Cs atom per molecule it disperses, forming an electronic band of similar to 130 meV width along the direction perpendicular to the molecular plane, while no dispersion is observed in plane. Our results indicate that the anisotropic charge delocalization mediated by Cs atoms along the molecular stacking direction takes place in doped pentacene films.
引用
收藏
页码:2382 / 2389
页数:8
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