The influence of Cu/Al ratio on properties of chemical-vapor-deposition-grown p-type Cu-Al-O transparent semiconducting films -: art. no. 033707

被引：69
作者：
Cai, JL [1 ]
Gong, H [1 ]
机构：
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119074, Singapore
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 03期
关键词：
D O I：
10.1063/1.1997293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent p-type copper aluminum oxide (Cu-Al-O) semiconducting thin films, with Cu/Al atomic ratios ranging from 1.0 to 4.3, were deposited by plasma-enhanced metal-organic chemical-vapor deposition. The films were grown on z-cut single-crystal quartz substrates, at a substrate temperature of 450 degrees C. Crystalline CuAlO2 was found dominant in the films, including small amounts of CuAl2O4, Al2O3, and amorphous Cu2O. The effect of varying Cu/Al ratio on the structural, electrical, and optical properties of the films were studied by x-ray diffraction, energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy, and Seebeck technique, and discussed. We were able to optimize the Cu/Al ratio for the p-type conductivity and transmittance in copper aluminum oxide thin films, and the best conductive film, with a room-temperature conductivity of 0.289 S cm(-1) and a transparency of 80%, was found to have a Cu/Al ratio of 1.4 +/- 0.3. In addition, the mechanism of the p-type conduction of copper aluminum oxide was discussed. (c) 2005 American Institute of Physics.
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