A physically-derived large-signal nonquasi-static MOSFET model for computer aided device and circuit simulation part-I MOSFETs and CMOS inverters

被引：1

作者：

Payton, MW ^{[1
]}

Ho, FD ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

来源：

2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS | 2005年

关键词：

4-TERMINAL MOSFET;

D O I：

10.1109/ISCAS.2005.1465546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a large-signal nonquasi-static model for the transient analysis of MOSFET devices and circuits. The nonquasi-static model is based on MOSFET device physics as opposed to empirical methodologies and is valid in all three regions of device operation: weak, moderate, and strong inversion. The nonquasi-static model is implemented within a CAD software package that provides for the numerical simulation of both individual MOSFET devices and CMOS logic circuits. The CAD software calculates the transient terminal currents and voltages of individual MOSFET devices while providing voltage transfer curves and switching speeds for the CMOS logic circuits. Results are compared with those obtained from SPICE Level 3 and SPICE Level 7 (BSIM 3.1) for a wide range of device geometries and circuit loading conditions. Good agreement has been achieved.

引用

页码：4154 / 4158

页数：5

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