High-Power 1180-nm GaInNAs DBR Laser Diodes

被引：8

作者：

Aho, Antti T. ^{[1
]}

Viheriala, Jukka ^{[1
]}

Korpijarvi, Ville-Markus ^{[1
,2
]}

Koskinen, Mervi ^{[1
]}

Virtanen, Heikki ^{[1
]}

Christensen, Mathias ^{[3
,4
]}

Uusitalo, Topi ^{[1
]}

Lahtonen, Kimmo ^{[1
]}

Valden, Mika ^{[1
]}

Guina, Mircea ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33101, Finland

[2] Okmet Oyj, Vantaa 01301, Finland

[3] Norlase ApS, DK-4000 Roskilde, Denmark

[4] Tech Univ Denmark, Dept Photon Engn, DK-4000 Roskilde, Denmark

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 23期

基金：

芬兰科学院;

关键词：

High power; distributed Bragg reflector lasers; frequency doubling; antireflection coatings; RIDGE-WAVE-GUIDE; 2ND-HARMONIC GENERATION; 589; NM; GRATINGS;

D O I：

10.1109/LPT.2017.2760038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow-orange wavelengths.

引用

页码：2023 / 2026

页数：4

共 15 条

[1] High-power distributed Bragg reflector lasers operating at 1065 nm [J].

Achtenhagen, M. ;

Amarasinghe, N. V. ;

Evans, G. A. .

ELECTRONICS LETTERS, 2007, 43 (14) :755-757

[2]

[Anonymous], 2008, MS9710C OPT SPECTR A

[3] Watt-level second-harmonic generation at 589 nm with a PPMgO:LN ridge waveguide crystal pumped by a DBR tapered diode laser [J].

Bege, R. ;

Jedrzejczyk, D. ;

Blume, G. ;

Hofmann, J. ;

Feise, D. ;

Paschke, K. ;

Traenkle, G. .

OPTICS LETTERS, 2016, 41 (07) :1530-1533

[4] Concept for power scaling second harmonic generation using a cascade of nonlinear crystals [J].

Hansen, A. K. ;

Tawfieq, M. ;

Jensen, O. B. ;

Andersen, P. E. ;

Sumpf, B. ;

Erbert, G. ;

Petersen, P. M. .

OPTICS EXPRESS, 2015, 23 (12) :15921-15934

[5] Blue-green light generation using high brilliance edge emitting diode lasers [J].

Jechow, Andreas ;

Menzel, Ralf ;

Paschke, Katrin ;

Erbert, Goetz .

LASER & PHOTONICS REVIEWS, 2010, 4 (05) :633-655

[6] High performance quantum dot distributed feedback laser diodes around 1.15 μm [J].

Koeth, J. ;

Fischer, M. ;

Legge, M. ;

Seufert, J. ;

Werner, R. .

NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, 2008, 6909 :90904-90904

[7] High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm [J].

Korpijarvi, Ville-Markus ;

Viheriala, Jukka ;

Koskinen, Mervi ;

Aho, Antti T. ;

Guina, Mircea .

OPTICS LETTERS, 2016, 41 (04) :657-660

[8]

Murray KK, 1996, J MASS SPECTROM, V31, P1203, DOI 10.1002/(SICI)1096-9888(199611)31:11<1203::AID-JMS445>3.0.CO

[9]

2-3

[10] Efficient 494 mW sum-frequency generation of sodium resonance radiation at 589 nm by using a periodically poled Zn:LiNbO3 ridge waveguide [J].

Nishikawa, Tadashi ;

Ozawa, Akira ;

Nishida, Yoshiki ;

Asobe, Masaki ;

Hong, Feng-Lei ;

Haensch, Theodor W. .

OPTICS EXPRESS, 2009, 17 (20) :17792-17800

← 1 2 →