Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

被引：4

作者：

Oh, Joon-Ho ^{[1
]}

Kim, Kyoung-Kook ^{[2
]}

Hong, Hyun-Gi ^{[3
]}

Byeon, Kyeong-Jae ^{[1
]}

Lee, Heon ^{[1
]}

Yoon, Sang-Won ^{[1
,4
]}

Ahn, Jae-Pyoung ^{[4
]}

Seong, Tae-Yeon ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[2] Korea Polytech Univ, Dept Nanoopt Engn, Gyeonggi 429793, South Korea

[3] Samsung Adv Inst Technol, Mat & Device Ctr, Yongin 446712, Gyunggi Do, South Korea

[4] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 136791, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2010年 / 13卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Light-emitting diode; ITO; Ohmic contact; Transparent electrode; TRANSPARENT; MECHANISMS; RESISTANCE; EFFICIENCY;

D O I：

10.1016/j.mssp.2010.12.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 x 10(-3) Omega cm(2) upon annealing at 650 degrees C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 18-28% as compared to that of LEDs fabricated with unpatterned In/ITO contacts. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：272 / 275

页数：4

共 22 条

[1] The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
Bermudez, VM
Koleske, DD
Wickenden, AE
[J]. APPLIED SURFACE SCIENCE, 1998, 126 (1-2) : 69 - 82
[2] Fabrication of nano-hole array patterns on transparent conducting oxide layer using thermally curable nanoimprint lithography
Byeon, Kyeong-Jae
Hwang, Seon-Yong
Lee, Heon
[J]. MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 830 - 833
[3] Formation of low-resistance transparent Ni/Au ohmic contacts to a polarization field-induced p-InGaN/GaN superlattice
Jang, Ja-Soon
Sohn, Seong-Jin
Kim, Donghwan
Seong, Tae-Yeon
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (05) : L37 - L39
[4] Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN
Jang, JS
Seong, TY
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 3064 - 3066
[5] Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes
Kim, Kang-Won
Hong, Hyun-Gi
Song, June-O
Oh, Joon-Ho
Seong, Tae-Yeon
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2008, 44 (06) : 735 - 741
[6] Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN
Kim, SY
Jang, HW
Lee, JL
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (01) : 61 - 63
[7] Formation mechanism of cerium oxide-doped indium oxide/Ag Ohmic contacts on p-type GaN
Leem, Dong-Seok
Kim, Tae-Wook
Lee, Takhee
Jang, Ja-Soon
Ok, Young-Woo
Seong, Tae-Yeon
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (26)
[8] Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts
Lin, YC
Chang, SJ
Su, YK
Tsai, TY
Chang, CS
Shei, SC
Hsu, SJ
Liu, CH
Liaw, UH
Chen, SC
Huang, BR
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (12) : 1668 - 1670
[9] THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE
MARLOW, GS
DAS, MB
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 91 - 94
[10] Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy
Miller, EJ
Yu, ET
Waltereit, P
Speck, JS
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (04) : 535 - 537

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