Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory

被引：50
|
作者：
Kamada, Toshiya [1 ]
Sutou, Yuji [1 ]
Sumiya, Masashi [1 ]
Saito, Yuta [1 ]
Koike, Junichi [1 ]
机构：
[1] Tohoku Univ, Dept Mat Sci, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 13期
基金：
日本科学技术振兴机构;
关键词：
Phase change material; Ge-Cu-Te; Crystallization; Volume change; Memory switching; THIN-FILMS; THERMAL-STABILITY; GLASSES; TRANSITIONS;
D O I：
10.1016/j.tsf.2012.02.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge1Cu2Te3 compound films with a low melting point of about 500 degrees C for PCRAM application. Sputter-deposited Ge1Cu2Te3 amorphous films showed a high crystallization temperature of about 250 degrees C. The Ge1Cu2Te3 amorphous film showed an electrical resistance decrease of over 10(2)-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge1Cu2Te3 memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge2Sb2Te5 memory devices. Therefore, the Ge1Cu2Te3 compound is a promising phase change material for PCRAM application. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：4389 / 4393
页数：5
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