Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials

被引：10

作者：

Kroezen, H. J. ^{[1
]}

Eising, G. ^{[1
]}

ten Brink, G. ^{[1
]}

Palasantzas, G. ^{[1
]}

Kooi, B. J. ^{[1
]}

Pauza, A. ^{[2
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Plarion Ltd, Royston SG8 6HB, Herts, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期

关键词：

crystallisation; germanium compounds; phase change materials; Schottky barriers; surface potential;

D O I：

10.1063/1.3691179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface potential of the crystalline phase is similar to 30-60 mV higher than that of the amorphous phase. This potential asymmetry is explained qualitatively by the presence of a Schottky barrier at the amorphous-crystalline interface and supported also by quantitative Schottky model calculations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691179]

引用

页数：4

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