A novel copper interconnection technology using self aligned metal capping method

被引：18

作者：

Saito, T ^{[1
]}

Imai, T ^{[1
]}

Noguchi, J ^{[1
]}

Kubo, M ^{[1
]}

Ito, Y ^{[1
]}

Omori, S ^{[1
]}

Ohashi, N ^{[1
]}

Tamaru, T ^{[1
]}

Yamaguchi, H ^{[1
]}

机构：

[1] Hitachi Ltd, Device Dev Ctr, Tokyo 1988512, Japan

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self aligned metal capping process for Copper damascene interconnect is newly developed in this study. Tungsten capping layer is selectively formed on the Cu interconnect using the preferential deposition phenomenon of W-CVD assisted by pre and post treatment. This technology is applied to 0.2 mum bipolar CMOS LSI with multilevel Cu interconnects, and then yield, reliability and operation speed are evaluated.

引用

页码：15 / 17

页数：3

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