Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy

被引：13

作者：

Irokawa, Yoshihiro ^{[1
]}

Mitsuishi, Kazutaka ^{[1
]}

Nabatame, Toshihide ^{[1
]}

Kimoto, Koji ^{[1
]}

Koide, Yasuo ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 11期

关键词：

LOW DEFECT DENSITY; FIELD-EFFECT TRANSISTORS; POLAR GAN FACES; GALLIUM NITRIDE; CHARGE REDISTRIBUTION; GAN-GA2O3; INTERFACES; OXIDE; OXIDATION; OPERATION; DEVICES;

D O I：

10.7567/JJAP.57.118003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated interfaces in oxides/GaN(0001) by high-resolution scanning transmission electron microscopy (STEM). As a result, it was confirmed that a few-monolayer-thick crystalline intermediate layers with structures lattice-matched to GaN existed in plasma-enhanced atomic layer deposition (PE-ALD)-prepared SiO2/GaN. The STEM images of intermediate layers were quite similar to those of recently reported native oxides on GaN. Moreover, epitaxial layers with similar to 8% smaller in-plain lattice constants than GaN were observed in thermally oxidized GaN/GaN(0001), some parts of which seemed to be gamma-Ga2O3. This suggests that oxidation conditions play a critical role in the formation of structures of these intermediate layers. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

共 40 条

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