Criteria of Unpredictable Failure for High-Power InGaN LEDs

被引：0

作者：

Chernyakov, A. E. ^{[1
]}

Kartashova, A. P. ^{[2
]}

Shmidt, N. M. ^{[2
]}

Shabunina, E. I. ^{[2
]}

Talnishnikh, N. A. ^{[1
]}

Zakgeim, A. L. ^{[1
]}

机构：

[1] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, 26 Polytekh Heskaya Str, St Petersburg 194021, Russia

[2] RAS, Ioffe Phys Tech Inst, 26 Polytekh Heskaya Str, St Petersburg 194021, Russia

来源：

2016 17TH INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME) | 2016年

关键词：

BLUE LEDS; RECOMBINATION; DEGRADATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of the degradation study of commercial InGaN/GaN LEDs with the external quantum efficiency (EQE) similar to 40-50 % at 450-460 nm are presented. It has been clarified that one of the mechanisms responsible for EQE degradation and the unpredictable failure of LEDs is the multiphonon recombination of carriers. The distorted forward branch of I-V characteristics at U < 2V and the appearance of the S-I similar to j(4) section on the current spectral noise density dependences on current density in LEDs before or after 100 hours of aging test are the criteria identifying an unpredictable failure.

引用

页数：6

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