Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

被引：11
作者：
Ahn, Yoonho [1 ]
Seo, Jeongdae [1 ]
Lim, Daeyoung [1 ]
Son, Jong Yeog [1 ]
机构：
[1] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, South Korea
来源：
CURRENT APPLIED PHYSICS | 2015年 / 15卷 / 05期
关键词：
Ferroelectric thin film; BiFeO3; Glass substrate; Ferroelectric domain structure;
D O I：
10.1016/j.cap.2015.02.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated ferroelectric characteristics of BiFeO3 (BFO) thin films on SrRuO3 (SRO)/yttria-stabilized zirconia (YSZ)/glass substrates grown by pulsed laser deposition. YSZ buffer layers were employed to grow highly crystallized BFO thin films as well as SRO bottom electrodes on glass substrates. The BFO thin films exhibited good ferroelectric properties with a remanent polarization of 2P(r) = 59.6 mu C/cm(2) and fast switching behavior within about 125 ns. Piezoelectric force microscopy (PFM) study revealed that the BFO thin films have much smaller mosaic ferroelectric domain patterns than epitaxial BFO thin films on Nb:SrTiO3 substrates. Presumably these small domain widths which originated from smaller domain energy give rise to the faster electrical switching behavior in comparison with the epitaxial BFO thin films on Nb:SrTiO3 substrates. (C) 2015 Elsevier B.V. All rights reserved.
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页码：584 / 587
页数：4
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