Large time-scale electro-thermal simulation for loss and thermal management of power MOSFET

被引：0

作者：

Lee, JH ^{[1
]}

Cho, BH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea

来源：

PESC'03: 2003 IEEE 34TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-4, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In power electronics systems the management of power loss and temperature of switching devices is indispensable for the reliability of the whole system. In this paper, a simple electro-thermal simulation model is presented. This simulation model is capable of predicting the power loss and estimating the junction temperature of power device in various environmental conditions. The electro-thermal model is composed of electrical network model, semiconductor device model and thermal network model. These parts interact with each other to calculate the loss and temperature of device and parameters of each model. By focusing on the slow dynamics of heat sink temperature, the proposed model can be employed for the large time-scale simulations. A 200W boost converter using a power MOSFET as an active switch and adopting a natural convection cooling aluminum heat sink as a cooling device was taken as an example system. The experimental results are compared with the predicted values of the simulation model.

引用

页码：112 / 117

页数：6

共 10 条

[1]

Baliga B. J., 1995, Power semiconductor devices (general engineering)

[2] THERMAL COMPONENT MODELS FOR ELECTROTHERMAL NETWORK SIMULATION [J].

HEFNER, AR ;

BLACKBURN, DL .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (03) :413-424

[3]

Holman J.P., 1997, HEAT TRANSFER

[4] Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations [J].

Igic, PM ;

Mawby, PA ;

Towers, MS ;

Batcup, S .

SEVENTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2001, 2001, :35-42

[5]

JENKINS LC, 1984, REL MAINT S P ANN, P17

[6] Challenges in thermal modeling of electronics at the system level: Summary of panel held at the Therminic 2000 [J].

Joshi, Y ;

Baelmans, M ;

Copeland, D ;

Lasance, CJM ;

Parry, J ;

Rantala, J .

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2001, 24 (04) :611-613

[7]

Kraus A.D., 1995, Design and analysis of heat sinks

[8] Electro-thermal and logi-thermal simulation of VLSI designs [J].

Szekely, V ;

Poppe, A ;

Pahi, A ;

Csendes, A ;

Hajas, G ;

Rencz, M .

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 1997, 5 (03) :258-269

[9] Compact models for accurate thermal characterization of electronic parts [J].

Vinke, H ;

Lasance, CJM .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1997, 20 (04) :411-419

[10] Electro-thermal circuit simulation using simulator coupling [J].

Wunsche, S ;

Clauss, C ;

Schwarz, P ;

Winkler, F .

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 1997, 5 (03) :277-282

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