Spectroscopic studies of random telegraph noise in self-assembled InP quantum dots in GaInP

被引:14
作者
Pistol, ME [1 ]
机构
[1] Lund Univ, S-22100 Lund, Sweden
关键词
D O I
10.1103/PhysRevB.63.113306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have spectrally resolved the photoluminescence of InP quantum dots exhibiting random telegraph noise. In particular, we have investigated dots switching among three different levels. We find no spectral shift of the emission in the different states, only a modulation of the Intensity. Temperature-dependent experiments show that phonons are important in the process.
引用
收藏
页数:3
相关论文
共 50 条
  • [21] Carrier capture in self-assembled InAs/InP quantum dots
    INSA de Rennes, Rennes, France
    Conf Proc Int Conf Indium Phosphide and Relat Mater, (345-348):
  • [22] Lasing from excited states in self-assembled InP/GaInP quantum islands
    Porsche, J
    Ost, M
    Riedl, T
    Hangleiter, A
    Scholz, F
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 74 (1-3): : 263 - 268
  • [23] Shot noise in self-assembled InAs quantum dots
    Nauen, A
    Hapke-Wurst, I
    Hohls, F
    Zeitler, U
    Haug, RJ
    Pierz, K
    PHYSICAL REVIEW B, 2002, 66 (16)
  • [24] Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots
    Kim, JC
    Rho, H
    Smith, LM
    Jackson, HE
    Lee, S
    Dobrowolska, M
    Merz, JL
    Furdyna, JK
    APPLIED PHYSICS LETTERS, 1998, 73 (23) : 3399 - 3401
  • [25] Spectroscopic studies of self-assembled InAs and In0.5Ga0.5As quantum dots
    Stoddart, ST
    Polimeni, A
    Henini, M
    Eaves, L
    Main, PC
    Hayden, RK
    Uchida, K
    Miura, N
    APPLIED SURFACE SCIENCE, 1998, 123 : 366 - 370
  • [26] Electron and hole confinement in stacked self-assembled InP quantum dots
    Hayne, M
    Provoost, R
    Zundel, MK
    Manz, YL
    Eberl, K
    Moshchalkov, VV
    PHYSICAL REVIEW B, 2000, 62 (15): : 10324 - 10328
  • [27] Imaging and single dot spectroscopy of InP self-assembled quantum dots
    Sugisaki, M
    Ren, HW
    Nair, SV
    Lee, JS
    Sugou, S
    Okuno, T
    Masumoto, Y
    JOURNAL OF LUMINESCENCE, 2000, 87-9 : 40 - 45
  • [28] Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
    Pettersson, H
    Landin, L
    Kleverman, M
    Seifert, W
    Samuelson, L
    Fu, Y
    Willander, M
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 1829 - 1831
  • [29] Characteristic study of InAs self-assembled quantum dots on GaAs/InP
    Yin, JZ
    Wang, XQ
    Yin, ZY
    Li, ZT
    Li, MT
    Qu, Y
    Du, GT
    Yang, SR
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 438 - 444
  • [30] InAs self-assembled quantum dots on InP by molecular beam epitaxy
    Fafard, S
    Wasilewski, Z
    McCaffrey, J
    Raymond, S
    Charbonneau, S
    APPLIED PHYSICS LETTERS, 1996, 68 (07) : 991 - 993