A 1.1 THz Gain-Bandwidth W-Band Amplifier in a 0.12 μm Silicon Germanium BiCMOS Process

被引：6

作者：

Kim, Joohwa ^{[1
]}

Buckwalter, James F. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 11期

关键词：

BiCMOS; millimeter-wave; SiGe; traveling wave amplifier; 90 NM CMOS; GHZ;

D O I：

10.1109/LMWC.2010.2073693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-band, cascaded constructive wave amplifier realizes high gain and bandwidth in a 0.12 mu m SiGe BiCMOS process. The amplifier achieves 37.5 dB gain at 90 GHz with a 3 dB bandwidth of 14.6 GHz. Consequently, this amplifier demonstrates a gain-bandwidth product as high as 1,095 GHz. At nominal bias condition, input and output return losses are better than 11 dB over the entire 3 dB bandwidth and the output-referred dB is -5.5 dBm. The amplifier consumes 65 mW from a 1.8 V at a nominal bias condition and 130 mW from a 2 V at a high-gain bias condition. The chip occupies an area of 0.39 mm(2) including the pads.

引用

页码：625 / 627

页数：3

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