In situ observation of self-organizing nanodot formation under nanosecond-pulsed laser irradiation on Si surface

被引：32
|
作者：
Watanabe, S. [1 ,2 ]
Yoshida, Y. [2 ]
Kayashima, S. [2 ]
Yatsu, S. [1 ,2 ]
Kawai, M. [3 ]
Kato, T. [4 ]
机构：
[1] Hokkaido Univ, Fac Engn, Ctr Adv Res Energy & Mat, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Engn, Div Quantum Sci & Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[3] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan
[4] Hitachi Ltd, Mat Res Lab, Hitachi, Ibaraki 3191292, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 10期
关键词：
SILICON; NANOCLUSTERS; DAMAGE; ARRAY;
D O I：
10.1063/1.3512888
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An in situ observation of the formation of a laser-irradiation-induced nanodot array on a Si surface was performed using a pulsed-laser-equipped high-voltage electron microscope (laser-HVEM). Under multiple nanosecond (ns) pulsed laser irradiation shots, atomic clusters were first formed and distributed on the surface in order to grow them epitaxially into protruded dots with diameters of ten nanometers or less. This is followed by their diffusion induced by successive laser shots to cannibalize and merge them into a ripple line with aligned, larger dots. We conclude that the present subwavelength two-dimensionally-ordered nanodot array is formed by self-organization under pulsed laser irradiation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512888]
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页数：5
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