A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes

被引：141
作者：
Narushima, S
Mizoguchi, H
Shimizu, K
Ueda, K
Ohta, H
Hirano, M
Kamiya, T
Hosono, H [1 ]
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Japan Sci & Technol Corp, Exploratory Res Adv Technol, Transparent Electroact Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[3] Keio Univ, Dept Econ, Yokohama, Kanagawa 2330061, Japan
来源：
ADVANCED MATERIALS | 2003年 / 15卷 / 17期
关键词：
D O I：
10.1002/adma.200304947
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A new class of semiconductor, a p-type wide-bandgap amorphous oxide, ZnO·Rh2O3, is introduced. As such, the ZnO·Rh2O3 film deposited at room temperature appears to be amorphous in X-ray diffraction measurement. Transmission electron microscopy (TEM) observation has revealed that these amorphous films are composed of very fine ordered structures that include only 4-6 RhO6 octahedra, which are formed as a consequence of the local edge-sharing network structure.
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页码：1409 / 1413
页数：5
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