Introduction of a High Selectivity Etching Process with Advanced SiNx Etch Gas in the Fabrication of FinFET Structures

被引:0
作者
Kojiri, T. [1 ,2 ]
Suwa, T. [1 ]
Hashimoto, K. [1 ]
Teramoto, A. [1 ]
Kuroda, R. [3 ]
Sugawa, S. [1 ,3 ]
机构
[1] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, 6-6-10 Aza Aoba, Sendai, Miyagi 9808579, Japan
[2] Zeon Corp, R&D Ctr, Kawasaki Ku, 1-2-1 Yako, Kawasaki, Kanagawa 2109507, Japan
[3] Tohoku Univ, Grad Sch Engn, Aoba Ku, 6-6-11 Aza Aoba, Sendai, Miyagi 9808579, Japan
来源
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6 | 2016年 / 72卷 / 04期
关键词
MICROWAVE-EXCITED PLASMA; HIGH-PERFORMANCE; CMOS; GATE;
D O I
10.1149/07204.0023ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We evaluated the etching characteristics of a developed prototype hydrofluorocarbon-based SiNx etch gas. The developed gas has higher etching selectivity to poly-Si and SiO2 than conventional SiNx etch gases and a maximum selectivity of 62 to poly-Si and of over 100 to SiO2 were obtained. These highly selective etching chemicals are required for the development of three-dimensional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). In this work, we focused on Fin Field Effect Transistors (FinFETs), and in particular, FinFET structures that were fabricated by application of the developed gas to the gate spacer etch process. The FinFET structure fabricated with the developed gas is superior to that of the structure fabricated with CH3F, which is conventionally used for SiNx etching. We found that the developed gas is a promising etching gas for future high selectivity etching technologies.
引用
收藏
页码:23 / 30
页数:8
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