Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology

被引：1

作者：

Luo, Peng ^{[1
]}

Madathil, Sankara Narayanan Ekkanath ^{[1
]}

de Souza, Priyanka ^{[2
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield, S Yorkshire, England

[2] Poweronic, Singapore, Singapore

来源：

2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA) | 2021年

关键词：

IGBE Clustered IGBT; field-stop technology; dynamic avalanche; dV/dt controllability; DYNAMIC AVALANCHE;

D O I：

10.1109/ECCE-Asia49820.2021.9479243

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this paper a 1.2 kV, 50 A trench clustered IGBT is experimentally demonstrated in field-stop technology for the first time. Due to the optimized field stop layer design, the off-state leakage current is lower than 1 mA at 175 degrees C. A low on-state voltage drop of 1.6 V is achieved at 150 degrees C. The saturation current levels are effectively controlled by the self-clamping feature. Moreover, experimental results confirm that the fabricated devices exhibit dynamic avalanche-five switching performance as well as high dV/dt controllability.

引用

页码：1319 / 1324

页数：6

共 28 条

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