Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon

被引：46

作者：

Giri, PK ^{[1
]}

Coffa, S

Rimini, E

机构：

[1] Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India

[2] Univ Catania, Dipartimento Fis, I-95129 Catania, Italy

[3] CNR, IMETEM, I-95121 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.1339253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the origin of the photoluminescence (PL) W band in ion-implanted Si by studying the temperature evolution and depth profile of the related defects. Evolution of the PL spectra induced by postimplant annealing is correlated to a transition of small interstitial clusters to extended {311} defects in self-ion-implanted Si. Growth of W band intensity after step-by-step removal of the damaged layer rules out the involvement of vacancy-related defects in the formation of the W center and establishes that migrated and clustered interstitials give rise to an intense W band. The annealing behavior and the thermally activated growth of the W center suggest the involvement of small interstitial clusters, larger than di-interstitial. In accordance with recent results based on simulational studies, we argue that the W center consists of tri-interstitial clusters of silicon. (C) 2001 American Institute of Physics.

引用

页码：291 / 293

页数：3

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