Novel finite-q plasmons in p-type GaAs/AlxGa1-xAs quantum wells

被引：3

作者：

Cheng, SJ ^{[1
]}

Gerhardts, RR ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 12期

关键词：

GaAs; p-type quantum wells; collective excitation; plasmon;

D O I：

10.1016/S0038-1098(00)00394-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a calculation of collective plasmon excitations in p-type GaAs/AlGaAs quantum wells, which is based on the random phase approximation and takes, within the 4 x 4 kp model, band-structure effects exactly into account. We predict that the strong dependence of the subband wave functions on the in-plane wave vector, which does not exist in n-type quantum wells, leads to the existence of a novel, additional inter-subband plasmon at finite wave vectors and to a strong coupling of the intra- and the inter-subband plasmons, even in symmetric wells. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：669 / 674

页数：6