Novel finite-q plasmons in p-type GaAs/AlxGa1-xAs quantum wells

被引：3

作者：

Cheng, SJ ^{[1
]}

Gerhardts, RR ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 12期

关键词：

GaAs; p-type quantum wells; collective excitation; plasmon;

D O I：

10.1016/S0038-1098(00)00394-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a calculation of collective plasmon excitations in p-type GaAs/AlGaAs quantum wells, which is based on the random phase approximation and takes, within the 4 x 4 kp model, band-structure effects exactly into account. We predict that the strong dependence of the subband wave functions on the in-plane wave vector, which does not exist in n-type quantum wells, leads to the existence of a novel, additional inter-subband plasmon at finite wave vectors and to a strong coupling of the intra- and the inter-subband plasmons, even in symmetric wells. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：669 / 674

页数：6

共 34 条

[31] High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/AlxGa1-xAs heterostructure
Ashlea Alava, Y.
Wang, D. Q.
Chen, C.
Ritchie, D. A.
Klochan, O.
Hamilton, A. R.
APPLIED PHYSICS LETTERS, 2021, 119 (06)
[32] Interfacial behaviour of a quantum well electrode/electrolyte:: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte
Liu, Y
Xiao, XR
Wang, RZ
Li, DL
Zeng, YP
Yang, CH
Sun, DZ
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1997, 430 (1-2): : 91 - 95
[33] Determination of the acoustic phonon-hot carriers interaction in n- and p-type modulation-doped GaInNAs/GaAs quantum wells
Donmez, Omer
Sarcan, Fahrettin
Erol, Ayse
PHYSICA B-CONDENSED MATTER, 2021, 612
[34] Direct band gap InxGa1-xAs/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector
Harbi, N.
Sfina, N.
Jbeli, A.
Lazzari, J-L
Said, M.
OPTICAL MATERIALS, 2015, 46 : 472 - 480

← 1 2 3 4 →