B implants in Si1-xGex/Si

Boron ion implantations were performed into 100 nm thick, undoped, strained Si1-xGex alloy films with x values of 0, 0.1, and 0.2 grown on (100) Si. B implants of 1 x 10(13) 1 x 10(14), and 1 x 10(15) cm(-2) were done at 20 keV. Implant activation was accomplished by using either 20 s rapid thermal anneals or 10 min furnace anneals, both at temperatures up to 800 degrees C. The annealed material was characterized by Hall, secondary ion mass spectrometry, and x-ray rocking curve measurements. We observed an increasing B activation with increasing Ge concentration in the alloy. For x=0.2 we obtained 100% B activation for 1 x 10(13) and 1 x 10(14) cm(-2) implants annealed at 700 and 800 degrees C. (C) 1996 American Institute of Physics.