TCO optimization in Si heterojunction solar cells on p-type wafers with n-SiOx emitter

被引：6

作者：

Izzi, M. ^{[1
]}

Tucci, M. ^{[1
]}

Serenelli, L. ^{[1
]}

Mangiapane, P. ^{[1
]}

Salza, E. ^{[1
]}

Chierchia, R. ^{[1
]}

Della Noce, M. ^{[2
]}

Usatii, I. ^{[2
]}

Bobeico, E. ^{[2
]}

Lancellotti, L. ^{[2
]}

Mercaldo, L. V. ^{[2
]}

Veneri, P. Delli ^{[2
]}

机构：

[1] ENEA, Casaccia Res Ctr, Rome, Italy

[2] ENEA, Portici Res Ctr, Naples, Italy

来源：

PROCEEDINGS OF THE EMRS 2015 SPRING MEETING - SYMPOSIUM C ON ADVANCED INORGANIC MATERIALS AND STRUCTURES FOR PHOTOVOLTAICS | 2015年 / 84卷

关键词：

Heterojunction; TCO; n-SiOx; SILICON; EFFICIENCY;

D O I：

10.1016/j.egypro.2015.12.306

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Silicon heterojunction solar cells have largely demonstrated their suitability to reach high efficiencies. We have here focused on p-type c-Si wafers as absorber, considering that they share more than 90% of the solar cell market. To overcome some of the issues encountered in the conventional (n)a-Si:H/(p)c-Si configuration, we have implemented a mixed phase n-type silicon oxide (n-SiOx) emitter in order to gain from the wider bandgap and lower activation energy of this material with respect to (n)a-Si:H. The workfunction of the transparent conductive oxide layer (W-TCO) plays also a key role, as it may induce an unfavourable band bending at the interface with the emitter. We have here focused on AZO, a promising alternative to ITO. Different layers with varying W-TCO were prepared, by changing relevant deposition parameters, and were tested into solar cells. The experimental results have been explained with the aid of numerical simulations. Finally, for the n-SiOx/(p)c-Si heterojunction with optimized W-TCO a potential conversion efficiency well over 23% has been estimated. (C) 2015 Published by Elsevier Ltd.

引用

页码：134 / 140

页数：7

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