TCO optimization in Si heterojunction solar cells on p-type wafers with n-SiOx emitter

被引：6
作者：
Izzi, M. [1 ]
Tucci, M. [1 ]
Serenelli, L. [1 ]
Mangiapane, P. [1 ]
Salza, E. [1 ]
Chierchia, R. [1 ]
Della Noce, M. [2 ]
Usatii, I. [2 ]
Bobeico, E. [2 ]
Lancellotti, L. [2 ]
Mercaldo, L. V. [2 ]
Veneri, P. Delli [2 ]
机构：
[1] ENEA, Casaccia Res Ctr, Rome, Italy
[2] ENEA, Portici Res Ctr, Naples, Italy
来源：
PROCEEDINGS OF THE EMRS 2015 SPRING MEETING - SYMPOSIUM C ON ADVANCED INORGANIC MATERIALS AND STRUCTURES FOR PHOTOVOLTAICS | 2015年 / 84卷
关键词：
Heterojunction; TCO; n-SiOx; SILICON; EFFICIENCY;
D O I：
10.1016/j.egypro.2015.12.306
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Silicon heterojunction solar cells have largely demonstrated their suitability to reach high efficiencies. We have here focused on p-type c-Si wafers as absorber, considering that they share more than 90% of the solar cell market. To overcome some of the issues encountered in the conventional (n)a-Si:H/(p)c-Si configuration, we have implemented a mixed phase n-type silicon oxide (n-SiOx) emitter in order to gain from the wider bandgap and lower activation energy of this material with respect to (n)a-Si:H. The workfunction of the transparent conductive oxide layer (W-TCO) plays also a key role, as it may induce an unfavourable band bending at the interface with the emitter. We have here focused on AZO, a promising alternative to ITO. Different layers with varying W-TCO were prepared, by changing relevant deposition parameters, and were tested into solar cells. The experimental results have been explained with the aid of numerical simulations. Finally, for the n-SiOx/(p)c-Si heterojunction with optimized W-TCO a potential conversion efficiency well over 23% has been estimated. (C) 2015 Published by Elsevier Ltd.
引用
收藏
页码：134 / 140
页数：7
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