Notes on Reproducibility of Ge2Sb2Te5 Properties

被引:3
|
作者
Tanaka, Keiji [1 ]
机构
[1] Hokkaido Univ, Dept Appl Phys, Grad Sch Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源
关键词
amorphous films; chalcogenides; electrical conductivity; phase changes; sputtering; OPTICAL-PROPERTIES; THIN-FILMS; MEMORY; GETE;
D O I
10.1002/pssb.201900756
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Sputtered Ge2Sb2Te5 (GST) films are utilized in phase-change devices, whereas the quantitative reproducibility of fundamental properties such as refractive index and electrical conductivity remains unsatisfactory. Herein, it is exemplified that the properties are considerably affected by sputter conditions. It seems that high-quality amorphous films are deposited with slow dc sputtering at high voltages and low Ar pressures. It is also discussed whether the cubic GST is a degenerate or a nondegenerate semiconductor.
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页数:4
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