Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs

被引：12

作者：

Rubinger, RM ^{[1
]}

de Oliveira, AG ^{[1
]}

Ribeiro, GM ^{[1
]}

Bezerra, JC ^{[1
]}

Moreira, MVB ^{[1
]}

Chacham, H ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, Inst Ciencias Exatas, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.1314899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 degreesC under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. (C) 2000 American Institute of Physics. [S0021-8979(00)01822-3].

引用

页码：6541 / 6544

页数：4

共 10 条

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