A/B Site Modified MgTiO3 Dielectric Ceramics for Microwave Application

A/B site modified MgTiO3 dielectric ceramics were fabricated by a solid-state method. The charge compensation of Ni2+ or Zn2+ ions substitution into Mg2+ site and Sn4+ ions substitution into Ti4+ site of MgTiO3 ceramics was performed. The analysis verified that MgTiO3-based ceramics with a rhombohedral structure accompany with a impure phase of Mg2TiO4. A/B site modification improved sintering ability and dielectric properties. The MgTi0.95Sn0.05O3 ceramics has a combined dielectric performance with epsilon(r) of 18.2, Q x f of 135500 GHz and tau(f) of -60.4 ppm/degrees C. Typically, Mg0.95Zn0.05Ti0.95Sn0.05O3 ceramics show improved dielectric properties with epsilon(r) of 18.4, Q x f of 142800 GHz and tau(f) of -64.7 ppm/degrees C.