Development of CuInS2-based solar cells and modules

被引：34

作者：

Klenk, R. ^{[1
]}

Klaer, J. ^{[1
]}

Koeble, Ch. ^{[1
]}

Mainz, R. ^{[1
]}

Merdes, S. ^{[1
]}

Rodriguez-Alvarez, H. ^{[1
]}

Scheer, R. ^{[2
]}

Schock, H. W. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 06期

关键词：

Chalcopyrite; Rapid thermal processing; THIN-FILMS; GROWTH-MECHANISM; LAYERS; GA;

D O I：

10.1016/j.solmat.2010.11.001

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Starting from a small area cell published in 1993, CuInS2 technology has been continuously improved with respect to performance and manufacturability. Major milestones include successful preparation by rapid thermal processing, a monolithically integrated module test structure on a 5 x 5 cm(2) substrate, implementation of an industrial pilot line, incorporation of gallium for higher open circuit voltages and better performance and demonstration of Cd-free devices. Phase formation, reaction pathways and interdiffusion mechanisms have been investigated and modelled as have been electronic and device properties such as current transport. This review summarizes the most significant aspects of development and our current understanding of the technology. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1441 / 1445

页数：5

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