Radio-, photo- and thermo-luminescence characterization in Eu3+-doped Bi4Ge3O12 single crystal for scintillator application

被引：16

作者：

Shim, JB

Yoshikawa, A

Nikl, M

Vedda, A

Fukuda, T

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] AS CR, Inst Phys, Prague 16253, Czech Republic

[3] Univ Milan, Dept Mat Sci, I-20125 Milan, Italy

[4] INFM, I-20125 Milan, Italy

来源：

OPTICAL MATERIALS | 2003年 / 24卷 / 1-2期

关键词：

radiation damage; luminescence; bismuth germanate;

D O I：

10.1016/S0925-3467(03)00136-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical absorption measurements before and after X-ray irradiation (induced absorption) were performed in order to investigate the radiation damage of the Eu3+-doped Bi4Ge3O12 (BGO) crystals. The Eu3+-doped BGO has shown higher radiation resistance with respect to the equivalently grown undoped BGO crystals. Radio-, photo- and thermo-luminescence characteristics were obtained to clarify the role of Eu3+ in luminescence and scintillation mechanism in Eu3+-doped BGO. Also, the role of Eu3+ in the processes of energy transfer and storage in this material could be explained. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：285 / 289

页数：5