Radio-, photo- and thermo-luminescence characterization in Eu3+-doped Bi4Ge3O12 single crystal for scintillator application

被引：16
|
作者：
Shim, JB
Yoshikawa, A
Nikl, M
Vedda, A
Fukuda, T
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] AS CR, Inst Phys, Prague 16253, Czech Republic
[3] Univ Milan, Dept Mat Sci, I-20125 Milan, Italy
[4] INFM, I-20125 Milan, Italy
来源：
OPTICAL MATERIALS | 2003年 / 24卷 / 1-2期
关键词：
radiation damage; luminescence; bismuth germanate;
D O I：
10.1016/S0925-3467(03)00136-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical absorption measurements before and after X-ray irradiation (induced absorption) were performed in order to investigate the radiation damage of the Eu3+-doped Bi4Ge3O12 (BGO) crystals. The Eu3+-doped BGO has shown higher radiation resistance with respect to the equivalently grown undoped BGO crystals. Radio-, photo- and thermo-luminescence characteristics were obtained to clarify the role of Eu3+ in luminescence and scintillation mechanism in Eu3+-doped BGO. Also, the role of Eu3+ in the processes of energy transfer and storage in this material could be explained. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：285 / 289
页数：5
相关论文
共 50 条
  • [11] GROWTH AND CHARACTERIZATION OF BI4GE3O12 SINGLE-CRYSTALS
    VOSZKA, R
    GEVAY, G
    FOLDVARI, I
    KESZTHELYILANDORI, S
    ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1982, 53 (1-2): : 7 - 13
  • [12] GROWTH AND CHARACTERIZATION OF BI4GE3O12 SINGLE-CRYSTALS
    GEVAY, G
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1987, 15 (3-4): : 145 - 186
  • [13] OPTICAL-TRANSITIONS IN CR DOPED BI4GE3O12 CRYSTAL
    HUANG, YP
    FENG, XQ
    HU, GQ
    YANG, BC
    LING, YQ
    PANG, WZ
    ZHU, JK
    CHINESE PHYSICS LETTERS, 1994, 11 (06): : 383 - 386
  • [14] THERMALLY STIMULATED LUMINESCENCE OF CUBIC BI4GE3O12
    SOMAIAH, K
    SCACCO, A
    VENKATANARAYANA, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1990, 25 (06) : K141 - K145
  • [15] LUMINESCENCE OF BI4GE3O12 - SPECTRAL AND DECAY PROPERTIES
    WEBER, MJ
    MONCHAMP, RR
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5495 - 5499
  • [16] Photoluminescence of Bi4Ge3O12 single crystals
    Gusev, V.A.
    Petrov, S.A.
    Optoelectronics, instrumentation, and data processing, 1988, (05) : 15 - 18
  • [17] Near-infrared luminescence in Al doped Bi4Ge3O12 crystals
    Yu, Pingsheng
    Su, Liangbi
    Guo, Xin
    Xu, Jun
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2012, 120 (1403) : 265 - 267
  • [18] Photoconductivity of Bi4Ge3O12 single crystals
    Gusev, V.A.
    Demenko, S.I.
    Petrov, S.A.
    Optoelectronics, instrumentation, and data processing, 1988, (05) : 32 - 33
  • [19] Growth and electrical properties of doped Bi4Ge3O12 single crystals
    Toncheva, D.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (02): : 286 - 288
  • [20] Characterization of scintillation properties of Nd-doped Bi4Ge3O12 single crystals with near-infrared luminescence
    Kai Okazaki
    Daichi Onoda
    Hiroyuki Fukushima
    Daisuke Nakauchi
    Takumi Kato
    Noriaki Kawaguchi
    Takayuki Yanagida
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 21677 - 21684
12345