Radio-, photo- and thermo-luminescence characterization in Eu3+-doped Bi4Ge3O12 single crystal for scintillator application

被引：16
|
作者：
Shim, JB
Yoshikawa, A
Nikl, M
Vedda, A
Fukuda, T
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] AS CR, Inst Phys, Prague 16253, Czech Republic
[3] Univ Milan, Dept Mat Sci, I-20125 Milan, Italy
[4] INFM, I-20125 Milan, Italy
来源：
OPTICAL MATERIALS | 2003年 / 24卷 / 1-2期
关键词：
radiation damage; luminescence; bismuth germanate;
D O I：
10.1016/S0925-3467(03)00136-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical absorption measurements before and after X-ray irradiation (induced absorption) were performed in order to investigate the radiation damage of the Eu3+-doped Bi4Ge3O12 (BGO) crystals. The Eu3+-doped BGO has shown higher radiation resistance with respect to the equivalently grown undoped BGO crystals. Radio-, photo- and thermo-luminescence characteristics were obtained to clarify the role of Eu3+ in luminescence and scintillation mechanism in Eu3+-doped BGO. Also, the role of Eu3+ in the processes of energy transfer and storage in this material could be explained. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：285 / 289
页数：5
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