Optimisation of a gas chromatographic method for trace gaseous impurities in nitrogen trifluoride by column sequence reversal

被引:8
作者
de Coning, Johannes Petrus [1 ]
Swinley, John McNeil [2 ]
机构
[1] S African Nucl Energy Corp NECSA, Pretoria, South Africa
[2] SSS, Johannesburg, South Africa
关键词
gas chromatography; column sequence reversal; nitrogen trifluoride; pulsed discharge helium ionisation detector; PDHID; trace gas analysis;
D O I
10.1016/j.chroma.2007.12.007
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
Highly reactive fluorinated gaseous matrices require special equipment and techniques for the gas chromatographic analysis of trace impurities in these gases. The impurities that were analysed at the low mg/L levels included dioxygen (O-2), dinitrogen (N-2), carbon dioxide (CO2), carbon monoxide (CO), sulfur hexafluoride (SF6), methane (CH4) and nitrous oxide (N2O). Carbon tetrafluoride (CF4) is also present in the product at levels of 20-400 mg/L and had to be analysed as well. This paper compares the use of a custom-built dual-channel gas chromatograph utilising single column back flush switching on one channel for the determination of O-2, N-2, CH4 and CO with column sequence reversal on a second channel for the determination Of CO2, N2O, SF6 and CF4 to a similar system using a combination of dual-column back flush and heartcut configurations. Pulsed discharge helium ionisation detectors were used on both channels in both configurations. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:151 / 158
页数:8
相关论文
共 19 条
[1]   Fluorinated gases for semiconductor manufacture: process advances in chemical vapor deposition chamber cleaning [J].
Allgood, CC .
JOURNAL OF FLUORINE CHEMISTRY, 2003, 122 (01) :105-112
[2]  
BRAKER W, 1980, MATHESON GAS DATA BO, P538
[3]  
BULLIS M, 1996, BOOK SEMI STANDARDS
[4]   Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride [J].
Cheng, S. F. ;
Woo, R. L. ;
Noori, A. M. ;
Malouf, G. ;
Goorsky, M. S. ;
Hicks, R. F. .
JOURNAL OF CRYSTAL GROWTH, 2007, 299 (02) :277-281
[5]   DIFFERENT PROCESSES FOR THE PREPARATION OF FLUOROZIRCONATE GLASSES [J].
FERRARIS, M ;
BRAGLIA, M ;
CHIAPPETTA, R ;
MODONE, E ;
COCITO, G .
MATERIALS RESEARCH BULLETIN, 1990, 25 (07) :891-897
[6]  
Golja B., 1985, Microelectronics Journal, V16, P5, DOI 10.1016/S0026-2692(85)80121-X
[7]   Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications [J].
Hellriegel, Ronald ;
Albert, Matthias ;
Hintze, Bernd ;
Winzig, Hubert ;
Bartha, J. W. .
MICROELECTRONIC ENGINEERING, 2007, 84 (01) :37-41
[8]  
HERKELMANN R, 1991, J FLUORINE CHEM, V54, P37
[9]  
HOGAN HD, 1997, SPECIALTY GAS ANAL P
[10]   DAMAGE-FREE REACTIVE ION ETCHING OF SILICON IN NF3 AT LOW-TEMPERATURE [J].
KONUMA, M ;
BANHART, F ;
PHILLIPP, F ;
BAUSER, E .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :265-268