Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

被引：57

作者：

Chen, Baile ^{[1
,2
]}

Wan, Yating ^{[1
]}

Xie, Zhiyang ^{[2
]}

Huang, Jian ^{[2
]}

Zhang, Ningtao ^{[2
]}

Shang, Chen ^{[1
]}

Norman, Justin ^{[1
]}

Li, Qiang ^{[3
]}

Yeyu, Tong ^{[1
,4
]}

Lau, Kei May ^{[3
]}

Gossard, Arthur C. ^{[1
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[2] ShanghaiTech Univ, Shanghai, Peoples R China

[3] Hong Kong Univ Sci & Technol, Kowloon, Hong Kong, Peoples R China

[4] Chinese Univ Hong Kong, Sha Tin, Hong Kong, Peoples R China

来源：

ACS PHOTONICS | 2020年 / 7卷 / 02期

关键词：

quantum dots; silicon; avalanche photodiodes; gain; bandwidth; TRAVELING-CARRIER PHOTODIODE; HIGH-SPEED; III-V; LASERS; PHOTODETECTORS;

D O I：

10.1021/acsphotonics.9b01709

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 mu m at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

引用

页码：528 / 533

页数：11

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