Structural and binding properties of vacancy clusters in silicon

被引：59

作者：

Bongiorno, A

Colombo, L

De la Rubia, TD

机构：

[1] Univ Milan, Dipartimento Sci Mat, INFM, I-20126 Milan, Italy

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

EUROPHYSICS LETTERS | 1998年 / 43卷 / 06期

关键词：

D O I：

10.1209/epl/i1998-00419-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By means of large-scale quantum simulations we investigate the formation and binding of vacancy clusters V-n in silicon for n less than or equal to 35. We show that different growth patterns exist and that an interplay between energy and topology arguments determines the most stable aggregates.

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页码：695 / 700

页数：6

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