Effect of double doping, Li and Se, on the high-temperature thermoelectric properties of Cu2Te

被引:6
作者
Mallick, Md. Mofasser [1 ]
Vitta, Satish [2 ]
机构
[1] Karlsruhe Inst Technol, Light Technol Inst, Kaiserstr 12, D-76131 Karlsruhe, Germany
[2] Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
关键词
PERFORMANCE; PBTE;
D O I
10.1007/s10854-020-02960-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cuprous chalcogenide, Cu2Se, attracted attention due to its large Seebeck coefficient coupled with low thermal conductivity, facilitated by the presence of disordered Cu-ions in the structure of Cu-Se. This compound is thermally unstable prompting investigation of its analogue Cu2Te which has a lower figure-of-merit zT due to its high charge carrier concentration. In the present work, a dual substitution, both cation and anion by Li and Se, respectively, has been attempted to enhance zT. The Cu2-xLixTe1-ySey alloys have been synthesized by a simple, conventional arc melting process and investigated without subjecting to any further processing. The room temperature microstructure shows a plate-like layered nanostructure in the grains with the grains oriented in random directions. The alloys at room temperature have two polymorphic phases, superstructured hexagonal and orthorhombic, co-existing in all the alloys. The alloys exhibit a degenerate semiconducting behavior in the range 300-1000 K with the conductivity decreasing from similar to 3000 Scm(-1) to 700 Scm(-1). All the alloys show a hole dominant Seebeck coefficient which increases with temperature from similar to 30 to 135 mu VK-1. The alloy with dual substitution, Li-0.1 and Se-0.03, has the highest power factor of 1.6 mWm(-1) K-2 at 1000 K. It's low thermal conductivity in the complete range < 1.5 Wm(-1) K-1 results in increasing the zT to 1.0 at 1000 K, an increase of 130% compared to the undoped alloy. These alloys are found to be thermally and temporally stable with no significant power loss either due to thermal cycling or aging.
引用
收藏
页码:4129 / 4134
页数:6
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