AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)

被引：22

作者：

Cordier, Y ^{[1
]}

Semond, F ^{[1
]}

Hugues, M ^{[1
]}

Natali, F ^{[1
]}

Lorenzini, P ^{[1
]}

Haas, H ^{[1
]}

Chenot, S ^{[1
]}

Laügt, M ^{[1
]}

Tottereau, O ^{[1
]}

Vennegues, P ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

molecular beam epitaxy; nitrides; high electron mobility transistors;

D O I：

10.1016/j.jcrysgro.2005.01.038

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we report on the properties of AlGaN/GaN/AlGaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the AlGaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, the static performances of long gate length devices demonstrate their interest for power applications. (c) 2005 Elsevier B.V. All rights reserved.

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页码：393 / 396

页数：4

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