Synthesis and luminescent properties of prospective Ce3+ doped silicate garnet phosphors for white LED converters

被引：25

作者：

Khaidukov, N. ^{[1
]}

Zorenko, T. ^{[2
]}

Iskaliyeva, A. ^{[2
]}

Paprocki, K. ^{[2
]}

Batentschuk, M. ^{[3
]}

Osvet, A. ^{[3
]}

Van Deun, R. ^{[4
]}

Zhydaczevskii, Ya. ^{[5
]}

Suchocki, A. ^{[5
]}

Zorenko, Yu. ^{[2
]}

机构：

[1] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

[2] Kazimierz Wiellci Univ Bydgoszcz, Inst Phys, PL-85090 Bydgoszcz, Poland

[3] Univ Erlangen Nurnberg, Inst Mat Energy & Electronictechnol I IMEET, Dept Mat Sci & Engn 6, D-91058 Erlangen, Germany

[4] Univ Ghent, Dept Inorgan & Phys Chem, Luminescent Lanthanide Lab L3, B-9000 Ghent, Belgium

[5] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF LUMINESCENCE | 2017年 / 192卷

关键词：

Luminescence; LED ceramic converters; Ca-Si based garnet; Ce3+ dopant; OPTICAL-PROPERTIES;

D O I：

10.1016/j.jlumin.2017.06.068

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The results on crystallization and investigation of the luminescent properties of prospective ceramic phosphors based on the Ce3+ doped {Ca2R}[ScB](CSi2)O12 (R = Lu, Y, Gd; B = Sc, Ga, C = Ga, Al) silicate garnets are presented for the first time in this work. We have observed the variations of the spectroscopic properties of Ce3+ ions in the mentioned Ca2+-Si4+ garnet hosts depending on the cation content at the dodecahedral {}, octahedral [] and tetrahedral () sites of garnet lattice. These results can be useful for the development of new generation of ceramic phosphor converters for white LEDs based on the garnet compounds under study.

引用

页码：328 / 336

页数：9

共 33 条

[1]

[Anonymous], 2014, SOL STAT LIGHT R D

[2]

[Anonymous], Patents, Patent No. [US8137587, US7879258, US7554258, US8123981, US8298442, 8137587]

[3]

[Anonymous], Patents, Patent No. [US7554258, US7879258, US8137587, US8298442, 8298442]

[4]

[Anonymous], Patents, Patent No. [US8123981, US7879258, US8137587, US8298442, 8123981]

[5]

[Anonymous], Patents, Patent No. [US7554258, US7879258, US8123981, US8137587, US8298442, 7554258]

[6]

[Anonymous], Patents, Patent No. [US7879258, US8123981, US8137587, US8298442, 7879258]

[7]

Dorenbos P., J PHYS CONDENS MATTE, V25

[8] Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping [J].

Fasoli, M. ;

Vedda, A. ;

Nikl, M. ;

Jiang, C. ;

Uberuaga, B. P. ;

Andersson, D. A. ;

McClellan, K. J. ;

Stanek, C. R. .

PHYSICAL REVIEW B, 2011, 84 (08)

[9] Epitaxial growth of single crystalline film phosphors based on the Ce3+-doped Ca2YMgScSi3O12 garnet [J].

Gorbenko, V. ;

Zorenko, T. ;

Paprocki, K. ;

Iskatiyeva, A. ;

Fedorov, A. ;

Schroeppel, F. ;

Levchuk, I. ;

Osvet, A. ;

Batentschuk, M. ;

Zorenko, Yu .

CRYSTENGCOMM, 2017, 19 (26) :3689-3697

[10] Optical spectroscopy of Ca3Sc2Si3O12, Ca3Y2Si3O12 and Ca3Lu2Si3O12 doped with Pr3+ [J].

Ivanovskikh, K. V. ;

Meijerink, A. ;

Piccinelli, F. ;

Speghini, A. ;

Zinin, E. I. ;

Ronda, C. ;

Bettinelli, M. .

JOURNAL OF LUMINESCENCE, 2010, 130 (05) :893-901

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