Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage

被引：167

作者：

Huang, Chi-Te ^{[1
,2
]}

Song, Jinhui ^{[2
]}

Tsai, Chung-Min ^{[1
]}

Lee, Wei-Fan ^{[1
]}

Lien, Der-Hsien ^{[2
]}

Gao, Zhiyuan ^{[2
,3
]}

Hao, Yue ^{[3
]}

Chen, Lih-Juann ^{[1
]}

Wang, Zhong Lin ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[3] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 36期

关键词：

NITRIDE NANOWIRES; SILICON NANOWIRES; GAN; ARRAYS; ENERGY; HETEROSTRUCTURES; HETEROJUNCTION; ELECTRICITY; DRIVEN;

D O I：

10.1002/adma.201000981

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Piezoelectric potential of a InN nanowire (NW) growing along [01 (1) over bar0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of -1 and -20 mV, and 25% to 30% of output voltages would exceed -100 mV. Some output voltages could reach the magnitude of -1000 mV, showing its great potential for fabricating high-output nanogenerators.

引用

页码：4008 / 4013

页数：6

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