High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

被引：25

作者：

Reddy, Pramod ^{[1
]}

Washiyama, Shun ^{[1
]}

Kaess, Felix ^{[1
]}

Breckenridge, M. Hayden ^{[1
,2
]}

Hernandez-Balderrama, Luis H. ^{[1
]}

Haidet, Brian B. ^{[1
]}

Alden, Dorian ^{[1
]}

Franke, Alexander ^{[1
]}

Sarkar, Biplab ^{[1
]}

Kohn, Erhard ^{[1
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA

[2] Wofford Coll, REU, Dept Phys, Spartanburg, SC 29303 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 14期

基金：

美国国家科学基金会;

关键词：

ELECTRON-MOBILITY TRANSISTORS; CURRENT COLLAPSE; ALN; INTERFACE; POLARITY; PLASMA; GROWTH; FILMS;

D O I：

10.1063/1.4945775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on AlxGa1-xN (of varying Al composition "x") via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 <= x <= 1) and present an electron barrier into AlGaN even at higher Al compositions, where E-g(AlGaN)> E-g(Si3N4). Further, no band bending is observed in AlGaN for x <= 0.6 and a reduced band bending (by similar to 1 eV in comparison to that at free surface) is observed for x>0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon ( Si0/-1) dangling bonds. The presence of band bending for x>0.6 is seen as a likely consequence of Fermi level alignment at Si3N4/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si3N4/n-GaN to the valence band in Si3N4/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition. (C) 2016 AIP Publishing LLC.

引用

页数：6

共 42 条

[1] Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation [J].

Alexewicz, A. ;

Alomari, M. ;

Maier, D. ;

Behmenburg, H. ;

Giesen, C. ;

Heuken, M. ;

Pogany, D. ;

Kohn, E. ;

Strasser, G. .

SOLID-STATE ELECTRONICS, 2013, 89 :207-211

[2] On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors [J].

Bakeroot, B. ;

You, S. ;

Wu, T-L. ;

Hu, J. ;

Van Hove, M. ;

De Jaeger, B. ;

Geens, K. ;

Stoffels, S. ;

Decoutere, S. .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (13)

[3] Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN [J].

Bryan, Zachary ;

Bryan, Isaac ;

Gaddy, Benjamin E. ;

Reddy, Pramod ;

Hussey, Lindsay ;

Bobea, Milena ;

Guo, Wei ;

Hoffmann, Marc ;

Kirste, Ronny ;

Tweedie, James ;

Gerhold, Michael ;

Irving, Douglas L. ;

Sitar, Zlatko ;

Collazo, Ramon .

APPLIED PHYSICS LETTERS, 2014, 105 (22)

[4] PREPARATION AND PROPERTIES OF ALUMINUM NITRIDE FILMS [J].

CHU, TL ;

KELM, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) :995-1000

[5] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J].

CLAASSEN, WAP ;

VALKENBURG, WGJN ;

HABRAKEN, FHPM ;

TAMMINGA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2419-2423

[6] Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications [J].

Collazo, Ramon ;

Mita, Seiji ;

Xie, Jinqiao ;

Rice, Anthony ;

Tweedie, James ;

Dalmau, Rafael ;

Sitar, Zlatko .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2031-2033

[7] Band offset measurements of the Si3N4/GaN (0001) interface [J].

Cook, TE ;

Fulton, CC ;

Mecouch, WJ ;

Davis, RF ;

Lucovsky, G ;

Nemanich, RJ .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :3949-3954

[8] Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates [J].

Dalmau, R. ;

Moody, B. ;

Schlesser, R. ;

Mita, S. ;

Xie, J. ;

Feneberg, M. ;

Neuschl, B. ;

Thonke, K. ;

Collazo, R. ;

Rice, A. ;

Tweedie, J. ;

Sitar, Z. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) :H530-H535

[9] Electronic surface and dielectric interface states on GaN and AlGaN [J].

Eller, Brianna S. ;

Yang, Jialing ;

Nemanich, Robert J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (05)

[10] Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition [J].

France, Ryan ;

Xu, Tao ;

Chen, Papo ;

Chandrasekaran, R. ;

Moustakas, T. D. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

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