Half-Metallicity in Co-Doped WSe2 Nanoribbons

被引:18
|
作者
Xu, Runzhang [1 ]
Liu, Bilu [1 ]
Zou, Xiaolong [1 ]
Cheng, Hui-Ming [1 ,2 ]
机构
[1] Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Low Dimens Mat & Devices Lab, Shenzhen 518055, Guangdong, Peoples R China
[2] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
关键词
half-metal; transition-metal dichalcogenides; doping spintronics; density functional theory calculations; TOTAL-ENERGY CALCULATIONS; MOS2; TRANSITION; MONOLAYER; ELECTRONICS; DEFECTS; METALS;
D O I
10.1021/acsami.7b12196
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The recent development of two-dimensional transition-metal dichalcogenides in electronics and optoelelectronics has triggered the exploration in spintronics, with high demand in search for half-metallicity in these systems. Here, through density functional theory (DFT) calculations, we predict robust half metallic behaviors in Co-edge-doped WSe2 nanoribbons (NRs). With electrons partially occupying the antibonding state consisting of Co 3d(yz) and Se 4p(z) orbitals, the system becomes spin-polarized due to the defect-state-induced Stoner effect and the strong exchange splitting eventually gives rise to the half-metallicity. The half-metal gap reaches 0.15 eV on the DFT generalized gradient approximation level and increases significantly to 0.67 eV using hybrid functional. Furthermore, we find that the half-metallicity sustains even under large external strain and relatively low edge doping concentration, which promises the potential of such Co-edge-doped WSe2 NRs in spintronics applications.
引用
收藏
页码:38796 / 38801
页数:6
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