Orientation-Patterned Templates GaAs/Ge/GaAs for Nonlinear Optical Devices. I. Molecular Beam Epitaxy

被引：3

作者：

Kazakov, I. P. ^{[1
]}

Tsekhosh, V. I. ^{[1
]}

Bazalevsky, M. A. ^{[1
]}

Klekovkin, A. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2017年 / 44卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

GaAs/Ge/GaAs heterostructures; molecular-beam epitaxy; template; crystal lattice turn;

D O I：

10.3103/S1068335617070016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaAs/Ge/GaAs heterostructures in which the GaAs layer lattice on Ge is rotated at a right angle to the substrate plane are grown by molecular-beam epitaxy (MBE). Such heterostructures are grown in different epitaxial setups for GaAs and for Ge with wafer transfer through air tor the first time. It is proposed to use surfactants (Bi, Sb) to control GaAs layer nucleation on Ge.

引用

页码：187 / 191

页数：5

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