High-gain microwave GaNHEMTs with source-terminated field-plates

被引：33

作者：

Wu, YF ^{[1
]}

Moore, M ^{[1
]}

Wisleder, T ^{[1
]}

Chavarkar, PM ^{[1
]}

Mishra, UK ^{[1
]}

Parikh, P ^{[1
]}

机构：

[1] Cree Santa Barbara Technol Ctr, Goleta, CA 93117 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN HEMTs with field-plates connected to the source terminal have been developed for high-gain, high-voltage operation at microwave frequencies. Due to the reduced feedback capacitance compared to the gate-terminated field-plate structures, improvement in large-signal gain of 5-7 dB is obtained. Superior performance including 21-dB associated gain, 20-W/mm output power and 60% power-added-efficiency at 4 GHz and 118V bias, is achieved simultaneously. This translates to an extremely high voltage-frequency-gain product approaching 10 kV-GHz.

引用

页码：1078 / 1079

页数：2