Structure and electrical properties of a-C:H thin films deposited by RF sputtering

被引：5

作者：

Yamazato, M. ^{[1
]}

Mizuma, I. ^{[1
]}

Higa, A. ^{[1
]}

机构：

[1] Univ Ryukyus, Dept Elect & Elect Engn, Okinawa 9030213, Japan

来源：

关键词：

Amorphous hydrogenated carbon; Sputtering; Bonding configurations; Optical properties; Electrical properties; DIAMOND-LIKE CARBON; HYDROGENATED AMORPHOUS-CARBON; H FILMS; FLOW-RATE; SPECTROSCOPY; RESONANCE;

D O I：

10.1016/j.diamond.2010.01.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the film structure and the electrical properties of hydrogenated amorphous carbon (a-C:H) thin films. a-C:H thin films were prepared by RF magnetron sputtering. Two different RF power sources of 13.56 MHz and 60 MHz were used to deposit the a-C:H films. The bonding hydrogen concentration varied from 1.6 x 10(22) cm(-3) to 8.6 x 10(22) cm(-3). The concentration of incorporated hydrogen atoms varied from 18 to 57 at.%. The optical gap increased from 1.58 eV to 2.56 eV with increasing the hydrogen concentration. The resistivity increased from 10(13) Omega cm to 10(15) Omega cm with increasing the hydrogen concentration. The permittivity measured at 1 MHz decreased from 5.6 to 2.3 with increasing the hydrogen concentration. These results suggest that the film structure and electrical properties can be controlled by the hydrogen concentration. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：695 / 698

页数：4

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