Structure and electrical properties of a-C:H thin films deposited by RF sputtering

被引：5
|
作者：
Yamazato, M. [1 ]
Mizuma, I. [1 ]
Higa, A. [1 ]
机构：
[1] Univ Ryukyus, Dept Elect & Elect Engn, Okinawa 9030213, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2010年 / 19卷 / 7-9期
关键词：
Amorphous hydrogenated carbon; Sputtering; Bonding configurations; Optical properties; Electrical properties; DIAMOND-LIKE CARBON; HYDROGENATED AMORPHOUS-CARBON; H FILMS; FLOW-RATE; SPECTROSCOPY; RESONANCE;
D O I：
10.1016/j.diamond.2010.01.035
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the film structure and the electrical properties of hydrogenated amorphous carbon (a-C:H) thin films. a-C:H thin films were prepared by RF magnetron sputtering. Two different RF power sources of 13.56 MHz and 60 MHz were used to deposit the a-C:H films. The bonding hydrogen concentration varied from 1.6 x 10(22) cm(-3) to 8.6 x 10(22) cm(-3). The concentration of incorporated hydrogen atoms varied from 18 to 57 at.%. The optical gap increased from 1.58 eV to 2.56 eV with increasing the hydrogen concentration. The resistivity increased from 10(13) Omega cm to 10(15) Omega cm with increasing the hydrogen concentration. The permittivity measured at 1 MHz decreased from 5.6 to 2.3 with increasing the hydrogen concentration. These results suggest that the film structure and electrical properties can be controlled by the hydrogen concentration. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：695 / 698
页数：4
相关论文
共 50 条
  • [1] Optical characterization of a-C:N thin films deposited by RF sputtering
    Ech-Chamikh, E
    Essafti, A
    Azizan, M
    Ijdiyaou, Y
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (10) : 1424 - 1428
  • [2] Dielectric properties of RF plasma-deposited a-C:H and a-C:H:N films
    Romanko, LA
    Gontar, AG
    Kutsay, AM
    Khandozko, SI
    Gorokhov, VY
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 801 - 804
  • [3] Structure and electrical properties of MgTiO3 thin films deposited by rf magnetron sputtering
    Huang, CL
    Pan, CL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (06): : 2440 - 2445
  • [4] Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering
    Jiang, Jinlong
    Wang, Yubao
    Du, Jinfang
    Yang, Hua
    Hao, Junying
    APPLIED SURFACE SCIENCE, 2016, 379 : 516 - 522
  • [5] Electron emission from a-C films deposited by RF sputtering
    Wang, Xiao Guang
    Watamori, Michio
    Madono, Hiroyuki
    Arimatsu, Daiki
    Kawano, Yuichi
    Oura, Kenjiro
    Hirao, Takashi
    Technology Reports of the Osaka University, 1999, 49 (2338): : 37 - 42
  • [6] Structural and electrical properties of Mg Silicide thin films deposited by RF sputtering
    Gupta, Suniksha
    Howlader, Smita
    Sharma, Atul
    Banerjee, M. K.
    Asokan, K.
    Sachdev, K.
    MATERIALS TODAY-PROCEEDINGS, 2020, 30 : 6 - 10
  • [7] Evaluation of phase, composition, microstructure and properties in TiC/a-C:H thin films deposited by magnetron sputtering
    Gulbinski, W
    Mathur, S
    Shen, H
    Suszko, T
    Gilewicz, A
    Warcholinski, B
    APPLIED SURFACE SCIENCE, 2005, 239 (3-4) : 302 - 310
  • [8] PROPERTIES OF INSULATING THIN FILMS DEPOSITED BY RF SPUTTERING
    PLISKIN, WA
    DAVIDSE, PD
    LEHMAN, HS
    MAISSEL, LI
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (04) : 461 - &
  • [9] Optical and Electrical Properties of α-MnTe Thin Films Deposited Using RF Magnetron Sputtering
    Mori, Shunsuke
    Sutou, Yuji
    Ando, Daisuke
    Koike, Junichi
    MATERIALS TRANSACTIONS, 2018, 59 (09) : 1506 - 1512
  • [10] The structure and optical properties of C doped BN thin films deposited by RF reactive magnetron sputtering
    Fan, Zhaohan
    Cheng, Yong
    Luo, Youzhi
    OPTICAL MATERIALS, 2020, 110
12345